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Student Poster Awards Nominations
Yun Ji Shin (Laboratoire des Matériaux et du Génie Physique, France) Experimental investigation of the seeding stage during SiC solution growth using Si and Si-Al solvents Ryo Miyasaka (University of Tokyo, Japan) Solution Growth of 4H-SiC using Cr Solvent Zhenjiang Wang (Nagoya University, Japan) Distribution of nitrogen doping concentration in 4H-SiC grown by solution method Selsabil Sejil ( Laboratoire des Multimatériaux et Interfaces, France) Optimization of VLS Growth Process for 4H-SiC P/N Junctions András Csóré (Budapest University of Technology and Economics, Hungary) Investigation of Mo defects in 4H-SiC by means of density functional theory Weifang Lu (Technical University of Denmark, Denmark) Photoluminescence enhancement in nano-textured fluorescent SiC passivated by atomic layer deposited Al2O3 films Dmitrij Simin (Julius Maximilian University of Wuerzburg, Germany) Coherent Spin Manipulation of Si-Vacancies in Silicon Carbide Mark Anders (The Pennsylvania State University, USA) A Surprising Result: "Bulk" SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs Kohki Murakami (University of Tsukuba, Japan) ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC Zhaoyang Peng (Institute of Microelectronics of Chinese Academy of Sciences, China) Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment Hua Rong (University of Warwick, UK) High Temperature Nitridation of 4H-SiC MOSFET Nobuaki Ema (Meijo University, Japan) Study on laser slicing technique for SiC wafer production Gernot Gruber (Kompetenzzentrum Automobil- und Industrieelektronik GmbH, Austria) Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance Chunkun Jiao (Auburn University, USA) Variation of interfacial phosphorus concentration on 4H-SiC MOS devices with phosphosilicate glass gate dielectric Junichi Hasegawa (Tokyo Institute of Technology, Japan) Measurement of the SiO2/SiC interface state density in a wide energy-level range using capacitance transient spectroscopy Maria Cabello (Centro nacional de microelectronica de Barcelona, Spain) Irradiation and Post-Annealed nMOSFETs with Al implanted p-well: Limit of Robustness Hussein Ayedh (University of Oslo, Norway) Controlling the carbon vacancy concentration in 4H-SiC subjected to high temperature treatment Yugo Kobayashi (Saitama University, Japan) Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs Maurizio Puzzanghera (Università di Parma, Italy) Forward current of Al+ implanted 4H-SiC diodes: a study on the periphery and the area components Thi Thanh Huyen Bui (Université de Lyon, France) Vertical termination filled with adequate dielectric for SiC devices in HVDC applications Arash Salemi (KTH Royal Institute of Technology, Sweden) Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs Peter Möller (Linköping University, Sweden) NOx sensing with SiC Field Effect Transistors Shota Watanabe (University of Nagoya, Japan) High-speed solution growth of single crystal AlN from Cr-Co-Al solvent